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www.irf.com 1 4/4/12 IRF6892STRPBF irf6892str1pbf directfet ? mosfet with schottky diode applicable directfet outline and substrate outline
isometric description the irf6892spbf combines the latest hexfet? power mosfet silicon technology with the advanced directfet tm packaging to achieve the lowest on-state resistance in a package that has the footprint of a so-8 and less than 0.7 mm profile. the directfet packa ge is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or con vection soldering techniques. application note an-1035 is followed regarding the manufacturing methods and processes. the directfet pac kage allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. the irf6892spbf balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to re duce both conduction and switching losses. this part contains an integrated schottky diode to reduce the qrr of the body drain diode furt her reducing the losses in a synchronous buck circuit. the reduced losses make this product ideal for high frequency/high efficiency dc-dc c onverters that power high current loads such as the latest generation of microprocessors. the irf6892spbf has been optimized for paramete rs that are critical in synchronous buck converter?s sync fet sockets. fig 1. typical on-resistance vs. gate voltage fig 2. typical total gate charge vs gate-to-source voltage click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 1.2mh, r g = 25 , i as = 22a. rohs compliant and halogen free low profile (<0.7 mm) dual sided cooling compatible ultra low package inductance optimized for high frequency switching ideal for cpu core dc-dc converters optimized for control fet application compatible with existing surface mount techniques 100% rg tested absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v i dm pulsed drain current e as single pulse avalanche energy mj i ar avalanche current a 22 240 max. 22 125 220 16 25 28 v a d g d s s s s1 s2 s3c m2 m4 l4 l6 l8 2 4 6 8 10 12 14 16 v gs, gate -to -source voltage (v) 0.0 2.0 4.0 6.0 8.0 t y p i c a l r d s ( o n ) ( m ) i d = 28a t j = 25c t j = 125c 0 1020304050 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v vds= 5v i d = 22a q g tot q gd q gs2 q rr q oss v gs(th) 17nc 6.0nc 2.3nc 39nc 16nc 1.8v v dss v gs r ds(on) r ds(on) 25v max 16v max 1.3m @ 10v 2.0m @ 4.5v

2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle 2%. d s g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 25 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 11 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 1.3 1.7 ??? 2.0 2.6 v gs(th) gate threshold voltage 1.1 1.8 2.1 v v gs(th) / t j gate threshold voltage coefficient ??? -9.8 ??? mv/c i dss drain-to-source leakage current ??? ??? 500 a ??? ??? 5.0 ma i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 290 ??? ??? s q g total gate charge ??? 17 25 q gs1 pre-vth gate-to-source charge ??? 4.0 ??? q gs2 post-vth gate-to-source charge ??? 2.3 ??? q gd gate-to-drain charge ??? 6.0 ??? q godr gate charge overdrive ??? 4.7 ??? see fig. 2 & 15 q sw switch charge (q gs2 + q gd ) ??? 8.3 ??? q oss output charge ??? 16 ??? nc r g gate resistance ??? 0.4 t d(on) turn-on delay time ??? 12 ??? t r rise time ??? 30 ??? t d(off) turn-off delay time ??? 16 ??? t f fall time ??? 9.5 ??? c iss input capacitance ??? 2510 ??? c oss output capacitance ??? 850 ??? c rss reverse transfer capacitance ??? 190 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) a i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 0.75 v t rr reverse recovery time ??? 22 33 ns q rr reverse recovery charge ??? 37 56 nc v ds = v gs , i d = 50 a m na nc v gs = 4.5v, i d = 22a ??? ??? ??? 76 220 v ds = 13v i d = 22a mosfet symbol ??? ns pf v gs = 0v di/dt = 300a/ s t j = 25c, i s = 22a, v gs = 0v showing the integral reverse p-n junction diode. t j = 25c, i f = 22a v gs = 16v v gs = -16v v ds = 20v, v gs = 0v v ds = 13v v ds = 20v, v gs = 0v, t j = 125c conditions v gs = 0v, i d = 1ma reference to 25c, i d = 5ma v gs = 10v, i d = 28a r g = 1.8 v ds = 13v, i d = 22a conditions ? = 1.0mhz v ds = 10v, v gs = 0v v dd = 13v, v gs = 4.5v v gs = 4.5v i d = 22a

www.irf.com 3 fig 3. maximum effective transient thermal impedance, junction-to-ambient surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple incontact with top (drain) of part. used double sided cooling, mounting pad with large heatsink.
mounted on minimum footprint full size board with metalized back and with small clip heatsink. r is measured at t j of approximately 90c. surface mounted on 1 in. square cu board (still air). mounted on minimum footprint full size board with metalized back and with small clip heatsink. (still air) absolute maximum ratings parameter units p d @t a = 25c power dissipation p d @t a = 70c power dissipation p d @t c = 25c power dissipation t p peak soldering temperature t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ??? 60 r 12.5 ??? r 20 ??? c/w r ??? 3.0 r 1.0 w/c 0.016 270 -40 to + 150 max. 42 2.1 1.3 w c 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc

4 www.irf.com fig 5. typical output characteristics fig 4. typical output characteristics fig 6. typical transfer characteristics fig 7. normalized on-resistance vs. temperature fig 8. typical capacitance vs.drain-to-source voltage fig 9. typical on-resistance vs. drain current and gate voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 3.5v 3.2v 2.9v 2.7v 2.6v bottom 2.4v 60 s pulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 3.5v 3.2v 2.9v 2.7v 2.6v bottom 2.4v 60 s pulse width tj = 150c 2.5v 1 2 3 4 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v ds = 15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 t y p i c a l r d s ( o n ) ( n o r m a l i z e d ) i d = 28a v gs = 10v v gs = 4.5v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 140 160 180 i d , drain current (a) 0 2 4 6 8 10 12 14 t y p i c a l r d s ( o n ) ( m ) t j = 25c vgs = 3.5v vgs = 4.0v vgs = 4.5v vgs = 5.0v vgs = 10v

www.irf.com 5 fig 13. typical threshold voltage vs. junction temperature fig 12. maximum drain current vs. case temperature fig 10. typical source-drain diode forward voltage fig 11. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 0.2 0.4 0.6 0.8 1.0 v sd , source-to-drain voltage (v) 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 120 140 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.5 2.0 2.5 t y p i c a l v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0ma 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.3a 2.1a bottom 22a 0.01 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc

6 www.irf.com fig 15a. gate charge test circuit fig 15b. gate charge waveform fig 16b. unclamped inductive waveforms fig 16a. unclamped inductive test circuit fig 17b. switching time waveforms fig 17a. switching time test circuit 1k vcc dut 0 l s 20k vds vgs id vgs(th) qgs1 qgs2 qgd qgodr r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as
1 0.1 %

+ - v ds v gs 90% 10% t d(off) t d(on) t f t r

www.irf.com 7 fig 19.

for n-channel hexfet power mosfets p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period ? ? ? ? ! " # ? $ % &'&& ? " (( ? &'&& ) $ ' + - + + + - - -

? please see an-1035 for directfet assembly details and stencil and substrate design recommendations d d d d g=gate d=drain s=source g s s s

8 www.irf.com
? part marking
? please see an-1035 for directfet assembly details and stencil and substrate design recommendations gate marking part number logo batch number date code line above the last character of the date code indicates "lead-free" code a b c d e f g h j k l m r p 0.016 0.0031 0.007 0.039 0.075 0.112 0.018 0.020 max 0.191 0.156 0.38 0.02 0.08 0.90 1.80 2.75 0.35 0.48 min 4.75 3.70 0.42 0.08 0.17 1.00 1.90 2.85 0.45 0.52 max 4.85 3.95 0.015 0.003 0.0008 0.071 0.035 0.108 0.019 0.014 min 0.146 0.187 metric imperial dimensions 1.18 1.22 0.048 0.047 0.028 0.68 0.72 0.027 0.024 0.52 0.62 0.020 0.020 0.48 0.52 0.019

www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified to msl1 rating for the consumer market.

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# qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/2012
? tape & reel dimension (showing component orientation). reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as IRF6892STRPBF). for 1000 parts on 7" reel, order irf6892str1pbf b c max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 imperial h min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 standard option (qty 4800) code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 metric g e f min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 tr1 option (qty 1000) max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c imperial a d loaded tape feed direction a e note: controlling dimensions in mm code a b c d e f g h f b c imperial min 0.311 0.154 0.469 0.215 0.158 0.197 0.059 0.059 max 8.10 4.10 12.30 5.55 4.20 5.20 n.c 1.60 min 7.90 3.90 11.90 5.45 4.00 5.00 1.50 1.50 metric dimensions max 0.319 0.161 0.484 0.219 0.165 0.205 n.c 0.063 d h g note: for the most current drawing please refer to ir website at http://www.irf.com/package

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